herunterladen
X2-Class HiPerFET
TM
IXFH80N65X2
V
DSS
= 650V
Power MOSFET
IXFK80N65X2
I
D25
= 80A
R
DS(on)
≤ 38mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-247 (IXFH)
G
D
S
D (Tab)
Symbol Test Conditions Maximum Ratings
TO-264P (IXFK)
GSM
G
D
D (Tab)
S
G = Gate D = Drain
S = Source Tab = Drain
J
stg
L
SOLD
Symbol Test Conditions Characteristic Values
Features
International Standard Packages
Low R
DS(ON)
and Q
G
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2016 IXYS CORPORATION, All Rights Reserved DS100673D(03/16)
(T
J
= 25°C,
Unless
Otherwise Specified)
Min.
Typ.
Max.
BV
DSS
V
GS
= 0V, I
D
= 1mA
650
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4mA
3.5
5.0
V
I
GSS
V
GS
= ±30V, V
DS
= 0V
±
100 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125
°
C
50 µ
A
3 mA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
38 m
Ω
V
DSS
T
J
= 25°C to 150°C
650
V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 650
V
V
GSS
Continuous
±30
V
V
Transient
±40
V
I
D25
T
C
= 25
°
C
80
A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
160
A
I
A
T
C
= 25
°
C
20
A
E
AS
T
C
= 25°C
3
J
dv/dt
I
S
≤ I
DM
, V
DD
≤ V
DSS
, T
J
≤ 150°C 50
V/ns
P
D
T
C
= 25°C 890
W
T
-55 ... +150
°
C
T
JM
150
°
C
T
-55 ... +150
°
C
T
Maximum Lead Temperature for Soldering
300
°C
T 1.6 mm (0.062in.) from Case for 10s
260
°C
M
d
Mounting Torque
1.13 / 10
Nm/lb.in
Weight TO-247
6
g
TO-264P
10
g
