PESD5V0U2BMB,315 Datenblatt-PDF - NXP

PESD5V0U2BMB,315 Datenblatt PDF

NXP

13 Seiten, 445 KB

PESD5V0U2BMB,315 Anderes Datenblatt

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14 Seiten, 581 KB

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* Bidirectional ESD protection of two lines * Ultra low leakage current: IRM =5nA * Ultra low diode capacitance: Cd = 2.9pF * ESD protection of up to 10kV * IEC 61000-4-2; level 4 (ESD) * AEC-Q101 qualified

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Ultra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diodearray in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plasticpackage designed to protect up to two signal lines from the damage caused by

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