IRLU120N Datenblatt-PDF - International Rectifier

IRLU120N Datenblatt PDF

International Rectifier

10 Seiten, 182 KB

IRLU120
Datenblatt PDF

Vishay Intertechnology

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3

IRLU120
Datenblatt PDF

Vishay Siliconix

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3

IRLU120
Datenblatt PDF

Samsung

Power Field-Effect Transistor, 7.9A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3

IRLU120
Datenblatt PDF

Infineon

Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3

IRLU120
Datenblatt PDF

International Rectifier

(IRLR120 / IRLU120) HEXFET Power MOSFET

IRLU120
Datenblatt PDF

VISHAY

IPAK N-CH 100V 7.7A

IRLU120
Datenblatt PDF

Fairchild

Power Field-Effect Transistor, 8.4A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

IRLU120
Datenblatt PDF

Vishay Semiconductor

POWER MOSFET

IRLU120NPBF
Datenblatt PDF

Infineon

IPAK N-CH 100V 10A

IRLU120NPBF
Datenblatt PDF

International Rectifier

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.185Ω; ID 10A; I-Pak (TO-251AA); PD 48W