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Teiledatenblatt > IGBT Transistor, IGBT Module > Infineon > IKW30N65NL5 Datenblatt-PDF
IKW30N65NL5
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IKW30N65NL5 Datenblatt-PDF - Infineon

Aktualisierte Zeit: 2023/12/04 07:54:17 (UTC+8)
IKW30N65NL5 Datenblatt-PDF (16 Seiten)
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IKW30N65NL5 Dokumente

IKW30N65NL5 Datenblatt PDF
Infineon
16 Seiten, 1927 KB
IKW30N65NL5 Benutzerreferenzhandbuch
Infineon
270 Seiten, 11877 KB
IKW30N65NL5 Anderes Datenblatt
Infineon
73 Seiten, 3004 KB
IKW30N65NL5 Anwendungshinweis
Infineon
29 Seiten, 1777 KB

IKW30N65 Datenblatt-PDF

IKW30N65EL5XKSA1
Datenblatt PDF
Infineon
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.
IKW30N65H5XKSA1
Datenblatt PDF
Infineon
Trans IGBT Chip N-CH 650V 55A 188000mW 3Pin(3+Tab) TO-247 Tube
IKW30N65H5
Datenblatt PDF
Infineon
Transistor: IGBT; 650V; 35A; 94W; TO247-3; TRENCHSTOP™ 5; Series: H5
IKW30N65ES5XKSA1
Datenblatt PDF
Infineon
Trans IGBT Chip N-CH 650V 62A 188000mW 3Pin(3+Tab) TO-247 Tube
IKW30N65NL5XKSA1
Datenblatt PDF
Infineon
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.
IKW30N65WR5XKSA1
Datenblatt PDF
Infineon
Trans IGBT Chip N-CH 650V 60A 185000mW 3Pin(3+Tab) TO-247 Tube
IKW30N65EL5
Datenblatt PDF
Infineon
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.
IKW30N65ES5
Datenblatt PDF
Infineon
Trans IGBT Chip N-CH 650V 62A 188000mW 3Pin(3+Tab) TO-247 Tube
IKW30N65NL5
Datenblatt PDF
Infineon
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.
IKW30N65WR5
Datenblatt PDF
Infineon
The reverse conducting TRENCHSTOP™ 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance technology also for cost sensitive customers. WR5 is recommended for use in AC-DC PFC stage in Welding, UPS and Solar.
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