BF 998 E6327 Datenblatt-PDF - Infineon

BF 998 E6327 Datenblatt PDF

Infineon

9 Seiten, 91 KB

BF 998 E6327 Benutzerreferenzhandbuch

Infineon

3 Seiten, 369 KB

BF 998 E6327 Anderes Datenblatt

Infineon

9 Seiten, 93 KB

BF 998 E6327 Andere Referenzen

Infineon

1 Seiten, 160 KB

BF998
Datenblatt PDF

NXP

Trans RF MOSFET N-CH 12V 0.03A 4Pin(3+Tab) SOT-143B

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Infineon

Trans RF MOSFET N-CH 12V 0.03A Automotive 4Pin(3+Tab) SOT-143 T/R

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Siemens Semiconductor

Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1GHz)

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Philips

Trans RF MOSFET N-CH 12V 0.03A 4Pin(3+Tab) SOT-143B

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Yageo

RF Small Signal Field-Effect Transistor, 1-Element, Silicon

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Vishay Semiconductor

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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Vishay Siliconix

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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Telefunken

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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Temic

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

BF998
Datenblatt PDF

Vishay Intertechnology

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,