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MC100EP16VADTR2G Benutzerreferenzhandbuch

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© Semiconductor Components Industries, LLC, 2008
August, 2016 Rev. 11
1 Publication Order Number:
MC10EP16VA/D
MC10EP16VA, MC100EP16VA
3.3V / 5V ECL Differential
Receiver/Driver with High
Gain
Description
The EP16VA is a world-class differential receiver/driver. The
device is functionally equivalent to the EP16 and LVEP16 devices but
with high gain output. Q
HG
and Q
HG
outputs have a DC gain several
times larger than the DC gain of an EP16.
The V
BB
pin, an internally generated voltage supply, is available to
this device only. For single-ended input conditions, the unused
differential input is connected to V
BB
as a switching reference voltage.
V
BB
may also rebias AC coupled inputs. When used, decouple V
BB
and V
CC
via a 0.01 mF capacitor and limit current sourcing or sinking
to 0.5 mA. When not used, V
BB
should be left open.
Under open input conditions (pulled to V
EE
) internal input clamps
will force the Q
HG
output LOW.
Special considerations are required for differential inputs under No
Signal conditions to prevent instability.
The 100 Series contains temperature compensation.
Features
270 ps Typical Propagation Delay
Gain = > 20
20 mV Minimum Input Voltage Swing
Maximum Frequency = > 3 GHz Typical
PECL Mode Operating Range:
V
CC
= 3.0 V to 5.5 Vwith V
EE
= 0 V
NECL Mode Operating Range:
V
CC
= 0 V with V
EE
= 3.0 V to 5.5 V
Open Input Default State
V
BB
Output
These Devices are Pb-Free, Halogen Free and are RoHS Compliant
SOIC8 NB
D SUFFIX
CASE 75107
MARKING DIAGRAMS*
TSSOP8
DT SUFFIX
CASE 948R02
ALYWG
G
HP64
ALYWG
G
KP64
1
8
1
8
1
8
www.onsemi.com
*For additional marking information, refer to
Application Note AND8002/D
.
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
ORDERING INFORMATION
1
8
HEP64
ALYW
G
1
8
KEP64
ALYW
G
1
8
DFN8
MN SUFFIX
CASE 506AA
(Note: Microdot may be in either location)
SOIC8 NB TSSOP8 DFN8
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb-Free Package
H = MC10
K = MC100
5M = MC10
3D = MC100
M = Date Code
5N MG
G
14
3E MG
G
14
Verzeichnis

MC100EP16VADTR2G Datenblatt-PDF

MC100EP16VADTR2G Datenblatt PDF
ON Semiconductor
11 Seiten, 149 KB
MC100EP16VADTR2G Benutzerreferenzhandbuch
ON Semiconductor
11 Seiten, 190 KB
MC100EP16VADTR2G Anderes Datenblatt
ON Semiconductor
37 Seiten, 344 KB
MC100EP16VADTR2G Diagramme zeichnen
ON Semiconductor
3 Seiten, 62 KB
MC100EP16VADTR2G Anwendungshinweis
ON Semiconductor
20 Seiten, 897 KB

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