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LM385BZ-1.2G Benutzerreferenzhandbuch

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© Semiconductor Components Industries, LLC, 2016
October, 2016 − Rev. 9
1 Publication Order Number:
LM285/D
LM285, LM385B
Micropower Voltage
Reference Diodes
The LM285/LM385 series are micropower two−terminal bandgap
voltage regulator diodes. Designed to operate over a wide current
range of 10 mA to 20 mA, these devices feature exceptionally low
dynamic impedance, low noise and stable operation over time and
temperature. Tight voltage tolerances are achieved by on−chip
trimming. The large dynamic operating range enables these devices to
be used in applications with widely varying supplies with excellent
regulation. Extremely low operating current make these devices ideal
for micropower circuitry like portable instrumentation, regulators and
other analog circuitry where extended battery life is required.
The LM285/LM385 series are packaged in a low cost TO−226
plastic case and are available in two voltage versions of 1.235 V and
2.500 V as denoted by the device suffix (see Ordering Information
table). The LM285 is specified over a −40°C to +85°C temperature
range while the LM385 is rated from 0°C to +70°C.
The LM385 is also available in a surface mount plastic package in
voltages of 1.235 V and 2.500 V.
Features
Operating Current from 10 mA to 20 mA
1.0%, 1.5%, 2.0% and 3.0% Initial Tolerance Grades
Low Temperature Coefficient
1.0 W Dynamic Impedance
Surface Mount Package Available
These Devices are Pb−Free and are RoHS Compliant
Figure 1. Representative Schematic Diagram
Open
for 1.235 V
10 k
Cathode
Anode
100 k
500 W
600 k
600 k
425 k
74.3 k
8.45 k
600 k
360 k
Open
for 2.5 V
-
+
LM385−1.2
1.235 V
3.3 k
1.5 V
Battery
Standard Application
SOIC−8
D SUFFIX
CASE 751
www.onsemi.com
(Bottom View)
312
8
7
6
5
Cathod
e
N.C.
N.C.
N.C.
4
3
2
Anode
N.C.
N.C.
1
N.C.
N.C.
Cathode
Anode
TO−92
(TO−226)
Z SUFFIX
CASE 29
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAMS
xxx = 1.2 or 2.5
y = 2 or 3
z = 1 or 2
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
LMy85
Z−xxx
ALYWG
G
1
8
(Note: Microdot may be in either location)
y85−z
ALYW
G
1
8
Verzeichnis

LM385BZ-1.2G Datenblatt-PDF

LM385BZ-1.2G Datenblatt PDF
ON Semiconductor
6 Seiten, 90 KB
LM385BZ-1.2G Benutzerreferenzhandbuch
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LM385BZ-1.2G Anderes Datenblatt
ON Semiconductor
25 Seiten, 1356 KB
LM385BZ-1.2G Diagramme zeichnen
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3 Seiten, 61 KB
LM385BZ-1.2G Notizdatei
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2 Seiten, 155 KB

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