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Teiledatenblatt > RAM Memory, DRAM IC > Integrated Silicon Solution(ISSI) > IS61WV25616BLL-10TLI-TR Datenblatt-PDF > IS61WV25616BLL-10TLI-TR Benutzerreferenzhandbuch Seite 1/2
IS61WV25616BLL-10TLI-TR
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IS61WV25616BLL-10TLI-TR Benutzerreferenzhandbuch - Integrated Silicon Solution(ISSI)

  • Hersteller:
    Integrated Silicon Solution(ISSI)
  • Kategorie:
    RAM Memory, DRAM IC
  • Fallpaket
    TSOP-44
  • Beschreibung:
    4Mb, High-Speed/Low Power, Async, 256K x 16, 8ns/3.3V, or 10ns/2.4V-3.6V, 44Pin TSOP II, Leadfree
Aktualisierte Uhrzeit: 2024-07-22 22:38:51 (UTC+8)

IS61WV25616BLL-10TLI-TR Benutzerreferenzhandbuch

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www.issi.com Part Decoder 2014
SRAM Part Decoder
QUAD/P, DDR-ll/P Part Decoder
IS 61 WV 12816 DBLL - 10 T L I
• SRAM Product Family
61/63 = High Speed
62 = Low Power
64 = Automotive High Speed
65 = Automotive Low Power
66 = Pseudo SRAM
67 = Automotive PSRAM
• Density/Configuration
Example:
25636 = 256Kx36
51216 = 512Kx16
1M36 = 1Mx36
• Die Rev/Voltage Range
Die Rev
Blank-Z
Voltage Range (WV)
ALL = 1.65V to 2.2V
BLL = 2.5V to 3.6V
• Solder Type
Blank = SnPb
L = Lead-free (RoHS Compliant)
Package Code
B, B1, B2, B3 = BGA
CT = Copper TSOP
H = sTSOP
J = 300-mil SOJ
K = 400-mil SOJ
LQ = LQFP
M, M3, = BGA
Q = SOP
T/T2 = TSOP
TQ = TQFP
U = SOP
Speed (ns or MHz)
Example:
8 = 8ns
200 = 200MHz
• Temp. Grade
Blank = Commercial Grade ( 0C to +70°C )
I = Industrial Grade ( -40C to +85°C )
A1 = Automotive Grade (-40C to +85°C)
A2 = Automotive Grade (-40C to +105°C)
A3 = Automotive Grade (-40C to +125°C)
• Operating Voltage Range/ Product Type
Asynchronous SRAM
C = 5V
LV = 3.3V
WV = Wide Voltage Range
Synchronous SRAM
P = Pipeline, F = Flowthrough
NLP/NLF/NVP/NVF = No-Wait Option
LP/LF: Vcc = 3.3V, VccQ = 3.3V/2.5V
VP/VF: Vcc = 2.5V, VccQ = 2.5V
QD = QUAD, DD = DDR-II Common I/O: Vcc = 1.8V , VccQ = 1.8V/1.5V
ISSI prefix
Product Family
Operating Voltage Range/Product Type
Density/Configuration
Die Rev/Voltage Range
Temp. Grade
Solder Type
Package Code
Speed (ns or MHz)
SRAM Part Decoder
IS 61 QDP 2 B4 4M18 A1 - 333 M3 L I
• Product Type
QD = QUAD
QDP = QUADP
DD = DDR-II, Common I/O
DDP = DDR-IIP, Common I/O
• Configuration
51236 = 512Kb x 36
1M18 = 1Mb x 18
1M36 = 1Mb x 36
2M18 = 2Mb x 18
2M36 = 2Mb x 36
4M18 = 4Mb x 18
• Read Latency (RL):
For QUAD/DDR-II devices:
Blank = 1.5 clock cycles
For QUADP/DDR-IIP devices:
Blank = 2.5 clock cycles
2 = 2.0 clock cycles
• ODT Option (if supported):
A: No ODT
A1: ODT Option 1
If ODT = HIGH or floating, a high range
termination resistance is selected.
If ODT = LOW, a low range
termination resistance is selected.
A2: ODT Option 2
If ODT = HIGH, a high range
termination resistance is selected.
If ODT = LOW or floating, ODT is disabled
• Speed
Example: 250 = 250MHz
• Package Code
B4 = 165 ball BGA (13 x 15 mm)
M3 = 165-ball BGA (15 x 17 mm)
• RoHS Version
Blank = Leaded
L = Lead-free
• Temperature Range
Blank = Commercial (0C to 70°C)
I = Industrial (-40C to 85°C)
• Burst Type:
B2 = Burst 2
B4 = Burst 4
ISSI prefix
Product Type
Read Latency
Burst Type
Configuration
ODT Option
Temp. Grade
RoHS Version
Package Code
Speed (MHz)

IS61WV25616BLL-10TLI-TR Datenblatt-PDF

IS61WV25616BLL-10TLI-TR Datenblatt PDF
Integrated Silicon Solution(ISSI)
21 Seiten, 206 KB
IS61WV25616BLL-10TLI-TR Benutzerreferenzhandbuch
Integrated Silicon Solution(ISSI)
2 Seiten, 43 KB
IS61WV25616BLL-10TLI-TR Anderes Datenblatt
Integrated Silicon Solution(ISSI)
23 Seiten, 505 KB

IS61WV25616BLL10 Datenblatt-PDF

IS61WV25616BLL-10TLI Datenblatt PDF
Integrated Silicon Solution(ISSI)
4Mb, High-Speed/Low Power, Async, 256K x 16, 8ns/3.3V, or 10ns/2.4V-3.6V, 44Pin TSOP II, RoHS
IS61WV25616BLL-10BLI Datenblatt PDF
Integrated Silicon Solution(ISSI)
4Mb, High-Speed/Low Power, Async, 256K x 16, 8ns/3.3V, or 10ns/2.4V-3.6V, 48 Ball mBGA (6x8 mm), RoHS
IS61WV25616BLL-10TL Datenblatt PDF
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 2.5V/3.3V 4M-bit 256K x 16 10ns 44Pin TSOP-II
IS61WV25616BLL-10TLI-TR Datenblatt PDF
Integrated Silicon Solution(ISSI)
4Mb, High-Speed/Low Power, Async, 256K x 16, 8ns/3.3V, or 10ns/2.4V-3.6V, 44Pin TSOP II, Leadfree
IS61WV25616BLL-10TL-TR Datenblatt PDF
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 2.5V/3.3V 4M-bit 256K x 16 10ns 44Pin TSOP-II T/R
IS61WV25616BLL-10BLI-TR Datenblatt PDF
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 2.5V/3.3V 4M-Bit 256K x 16 10ns 48Pin Mini-BGA T/R
IS61WV25616BLL-10BI Datenblatt PDF
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 2.5V/3.3V 4M-Bit 256K x 16 10ns 48Pin Mini-BGA
IS61WV25616BLL-10KLI Datenblatt PDF
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 2.5V/3.3V 4M-Bit 256K x 16 10ns 44Pin SOJ
IS61WV25616BLL-10KLI-TR Datenblatt PDF
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 2.5V/3.3V 4M-Bit 256K x 16 10ns 44Pin SOJ T/R
IS61WV25616BLL-10T Datenblatt PDF
Integrated Silicon Solution(ISSI)
TSOP44
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