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ADR444ARMZ Benutzerreferenzhandbuch

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Ultraprecision, Low Noise, 2.048 V/2.500 V/
3.00 V/5.00 V XFET
®
Voltage References
ADR420/ADR421/ADR423/ADR425
Rev. I
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.461.3113 ©2001–2011 Analog Devices, Inc. All rights reserved.
FEATURES
Low noise (0.1 Hz to 10 Hz)
ADR420: 1.75 μV p-p
ADR421: 1.75 μV p-p
ADR423: 2.0 μV p-p
ADR425: 3.4 μV p-p
Low temperature coefficient: 3 ppm/°C
Long-term stability: 50 ppm/1000 hours
Load regulation: 70 ppm/mA
Line regulation: 35 ppm/V
Low hysteresis: 40 ppm typical
Wide operating range
ADR420: 4 V to 18 V
ADR421: 4.5 V to 18 V
ADR423: 5 V to 18 V
ADR425: 7 V to 18 V
Quiescent current: 0.5 mA maximum
High output current: 10 mA
Wide temperature range: −40°C to +125°C
APPLICATIONS
Precision data acquisition systems
High resolution converters
Battery-powered instrumentation
Portable medical instruments
Industrial process control systems
Precision instruments
Optical network control circuits
PIN CONFIGURATION
02432-001
NIC = NO INTERNAL CONNECTION
TP = TEST PIN (DO NOT CONNECT)
ADR420/
ADR421/
ADR423/
ADR425
TOP VIEW
(Not to Scale)
TP
1
V
IN
2
NIC
3
GND
4
TP
8
NIC
7
V
OUT
6
TRIM
5
Figure 1. 8-Lead SOIC, 8-Lead MSOP
GENERAL DESCRIPTION
The ADR42x are a series of ultraprecision, second generation
eXtra implanted junction FET (XFET) voltage references
featuring low noise, high accuracy, and excellent long-term
stability in SOIC and MSOP footprints.
Patented temperature drift curvature correction technique and
XFET technology minimize nonlinearity of the voltage change
with temperature. The XFET architecture offers superior
accuracy and thermal hysteresis to the band gap references. It
also operates at lower power and lower supply headroom than
the buried Zener references.
The superb noise and the stable and accurate characteristics
of the ADR42x make them ideal for precision conversion
applications such as optical networks and medical equipment.
The ADR42x trim terminal can also be used to adjust the out-
put voltage over a ±0.5% range without compromising any
other performance. The ADR42x series voltage references
offer two electrical grades and are specified over the extended
industrial temperature range of −40°C to +125°C. Devices have
8-lead SOIC or 30% smaller, 8-lead MSOP packages.
ADR42x PRODUCTS
Table 1.
Initial Accuracy
Model
Output Voltage, V
OUT
(V)
mV % Temperature Coefficient (ppm/°C)
ADR420 2.048 1, 3 0.05, 0.15 3, 10
ADR421 2.50 1, 3 0.04, 0.12 3, 10
ADR423 3.00 1.5, 4 0.04, 0.13 3, 10
ADR425 5.00 2, 6 0.04, 0.12 3, 10
Verzeichnis

ADR444ARMZ Datenblatt-PDF

ADR444ARMZ Datenblatt PDF
ADI
20 Seiten, 391 KB
ADR444ARMZ Benutzerreferenzhandbuch
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24 Seiten, 387 KB
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ADR444 Datenblatt-PDF

ADR444ARZ
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* Ultralow noise (0.1Hz to 10Hz) * ADR440: 1µV p-p * ADR441: 1.2μV p-p * ADR443: 1.4μV p-p * ADR444: 1.8µV p-p * ADR445: 2.25μV p-p * Superb temperature coefficient * A grade: 10ppm/°C * B grade: 3ppm/℃ * Low dropout operation: 500mV * Input range: (VOUT + 500mV) to 18V * High output source and sink current * +10mA and -5mA, respectively * Wide temperature range:-40℃ to +125℃
ADR444BRZ
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* Ultralow noise (0.1Hz to 10Hz) * ADR440: 1µV p-p * ADR441: 1.2μV p-p * ADR443: 1.4μV p-p * ADR444: 1.8µV p-p * ADR445: 2.25μV p-p * Superb temperature coefficient * A grade: 10ppm/°C * B grade: 3ppm/℃ * Low dropout operation: 500mV * Input range: (VOUT + 500mV) to 18V * High output source and sink current * +10mA and -5mA, respectively * Wide temperature range:-40℃ to +125℃
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