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MRF6S19100HR3 MRF6S19100HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement - Mode Lateral MOSFETs
Designed for N-CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN- PCS/cellular radio and WLL
applications.
• Typical 2-Carrier N-CDMA Performance: V
DD
= 28 Volts, I
DQ
= 900 mA,
P
out
= 22 Watts Avg., f = 1987 MHz, IS-95 (Pilot, Sync, Paging, Traffic
Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB
@ 0.01% Probability on CCDF.
Power Gain — 16.1 dB
Drain Efficiency — 28%
IM3 @ 2.5 MHz Offset — -37 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — -51 dBc in 30 kHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large- Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
DD
Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
DSS
-0.5, +68 Vdc
Gate-Source Voltage V
GS
-0.5, +12 Vdc
Storage Temperature Range T
stg
- 65 to +150 °C
Case Operating Temperature T
C
150 °C
Operating Junction Temperature
(1,2)
T
J
225 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 77°C, 22 W CW
R
θ
JC
0.44
0.50
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF6S19100H
Rev. 5, 12/2008
Freescale Semiconductor
Technical Data
MRF6S19100HR3
MRF6S19100HSR3
1930-1990 MHz, 22 W AVG., 28 V
2 x N- CDMA
LATERAL N- CHANNEL
RF POWER MOSFETs
CASE 465A- 06, STYLE 1
NI- 780S
MRF6S19100HSR3
CASE 465- 06, STYLE 1
NI- 780
MRF6S19100HR3
Freescale Semiconductor, Inc., 2004-2006, 2008. All rights reserved.
Verzeichnis
- ・ Abmessungen des Paketumrisses on Seite 9
- ・ Blockdiagramm on Seite 3
- ・ Technische Daten on Seite 1
- ・ Anwendungsbereich on Seite 1
- ・ Elektrische Spezifikation on Seite 2
