herunterladen
1/11January 2002
.
STP80NF03L-04
STB80NF03L-04 STB80NF03L-04-1
N-CHANNEL 30V - 0.0035 Ω -80AD
2
PAK/I
2
PAK/TO-220
STripFET II POWER MOSFET
■ TYPICAL R
DS
(on) = 0.0035Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique ”Single Feature Size” strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
TYPE
V
DSS
R
DS(on)
I
D
STB80NF03L-04/-1
STP80NF03L-04
30 V
30 V
<0.004 Ω
<0.004 Ω
80 A
80 A
1
2
3
1
3
1
2
3
TO-220
D
2
PAK
TO-263
I
2
PAK
TO-262
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
ABSOLUTE MAXIMUM RATINGS
(•)
Pulse width limitedby safe operating area.
(**) Current Limited by Package
(1) I
SD
≤80A, di/dt ≤240A/µs, V
DD
≤ 24V, T
j
≤ T
JMAX
(2) Starting T
j
=25
o
C, I
D
= 40A, V
DD
= 20V
SALES TYPE MARKING PACKAGE PACKAGING
STB80NF03L-04 80NF03L-04 @ D
2
PAK TUBE
STB80NF03L-04T4 80NF03L-04 @
D
2
PAK
TAPE & REEL
STP80NF03L-04 80NF03L-04 @ TO-220 TUBE
STB80NF03L-04-1 80NF03L-04 @ I
2
PAK TUBE
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
=0)
30 V
V
DGR
Drain-gate Voltage (R
GS
=20kΩ)
30 V
V
GS
Gate- source Voltage ± 20 V
I
D
(**) Drain Current (continuos) at T
C
=25°C
80 A
I
D
(**) Drain Current (continuos) at T
C
= 100°C
80 A
I
DM
(•)
Drain Current (pulsed) 320 A
P
tot
Total Dissipation at T
C
=25°C
300 W
Derating Factor 2 W/°C
dv/dt
(1)
Peak Diode Recovery voltage slope 2 V/ns
E
AS
(2)
Single Pulse Avalanche Energy 2.3 J
T
stg
Storage Temperature -60 to 175 °C
T
j
Max. Operating Junction Temperature 175 °C
Verzeichnis
