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NJL3281DG Anwendungshinweis - ON Semiconductor

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NJL3281DG Anwendungshinweis

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© Semiconductor Components Industries, LLC, 2013
September, 2013 Rev. 1
1 Publication Order Number:
NJW3281/D
NJW3281G (NPN)
NJW1302G (PNP)
Complementary NPN-PNP
Silicon Power Bipolar
Transistors
The NJW3281G and NJW1302G are power transistors for high
power audio, disk head positioners and other linear applications.
Features
Exceptional Safe Operating Area
NPN/PNP Gain Matching within 10% from 50 mA to 5 A
Excellent Gain Linearity
High BVCEO
High Frequency
These Devices are PbFree and are RoHS Compliant
Benefits
Reliable Performance at Higher Powers
Symmetrical Characteristics in Complementary Configurations
Accurate Reproduction of Input Signal
Greater Dynamic Range
High Amplifier Bandwidth
Applications
HighEnd Consumer Audio Products
Home Amplifiers
Home Receivers
Professional Audio Amplifiers
Theater and Stadium Sound Systems
Public Address Systems (PAs)
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
CollectorEmitter Voltage V
CEO
250 Vdc
CollectorBase Voltage V
CBO
250 Vdc
EmitterBase Voltage V
EBO
5.0 Vdc
CollectorEmitter Voltage 1.5 V V
CEX
250 Vdc
Collector Current Continuous I
C
15 Adc
Collector Current Peak (Note 1) I
CM
30 Adc
Base Current Continuous I
B
1.6 Adc
Total Power Dissipation @ T
C
= 25°C
Derate Above 25°C
P
D
200
1.43
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
  65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoCase
R
q
JC
0.625 °C/W
Thermal Resistance, JunctiontoAmbient
R
q
JA
40 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
Device Package Shipping
ORDERING INFORMATION
15 AMPERES
COMPLEMENTARY
SILICON POWER TRANSISTORS
250 VOLTS 200 WATTS
http://onsemi.com
NJW1302G TO3P
(PbFree)
30 Units/Rail
NJW3281G TO3P
(PbFree)
30 Units/Rail
TO3P
CASE 340AB
STYLES 1,2,3
xxxx = 0281 or 0302
G = PbFree Package
A = Assembly Location
Y = Year
WW = Work Week
NJWxxxG
AYWW
MARKING
DIAGRAM
1
2
3
4
123
1
BASE
EMITTER 3
COLLECTOR 2, 4
1
BASE
EMITTER 3
COLLECTOR 2, 4
PNP
NPN
Verzeichnis

NJL3281DG Datenblatt-PDF

NJL3281DG Datenblatt PDF
ON Semiconductor
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NJL3281DG Anderes Datenblatt
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NJL3281DG Diagramme zeichnen
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2 Seiten, 58 KB
NJL3281DG Anwendungshinweis
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7 Seiten, 112 KB
NJL3281DG Notizdatei
ON Semiconductor
2 Seiten, 30 KB

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