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MRFX1K80H
1
RF Device Data
NXP Semiconductors
RF Power LDMOS Transistor
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFET
This high ruggedness dev ice is designed for use in high VSWR indus trial,
medical, broadc ast, aerospace and mobile radio applications . Its unmatc hed
input and output design supports frequency use from 1.8 to 400 MHz.
Typical Performance
Frequency
(MHz)
Signal Type
V
DD
(V)
P
out
(W)
G
ps
(dB)
η
D
(%)
27
(1)
CW 65 1800 CW 27.8 75.6
64 Pulse (100 μsec, 10% Duty Cycle) 65 1800 Peak 27.1 69.5
81.36 CW 63 1700 CW 24.5 76.3
87.5–108
(2,3)
CW 60 1600 CW 23.6 82.5
123/128 Pulse (100 μsec, 10% Duty Cycle) 65 1800 Peak 25.9 69.0
144 CW 65 1800 CW 23.5 78.0
230
(4)
Pulse (100 μsec, 20% Duty Cycle) 65 1800 Peak 25.1 75.1
325 Pulse (12 μsec, 10% Duty Cycle) 63 1700 Peak 22.8 64.9
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type VSWR
P
in
(W)
Test
Voltage
Result
230
(4)
Pulse
(100 μsec, 20%
Duty Cycle)
> 65:1 at all
Phase Angles
14 W Peak
(3 dB
Overdrive)
65 No Device
Degradation
1. Data from 27 MHz narrowband reference circuit (page 5).
2. Data from 87.5–108 MHz broadband reference circuit (page 10).
3. The values shown are the center band performance numbers across the indicated
frequency range.
4. Data from 230 MHz narrowband production test fixture (page 16).
Features
• Unmatched input and output allowing wide frequency range utilization
• Device can be used single--ended or in a push--pull configuration
• Qualified up to a maximum of 65 V
DD
operation
• Characterized from 30 to 65 V for extended power range
• High breakdown voltage for enhanced reliability
• Suitable for linear application with appropriate biasing
• Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation
• Lower thermal resistance option in over--molded plastic package: MRFX1K80N
• Included in NXP product longevity program with assured supply for a minimum of 15 years after launch
Typical Applications
• Industrial, scientific, medical (ISM)
– Laser generation
– Plasma generation
– Particle accelerators
– MRI, RF ablation and skin treatment
– Industrial heating, welding and drying systems
• Radio and VHF TV broadcast
• Aerospace
– VHF omnidirectional range (VOR)
– HF communications
– Weather radar
Document Number: MRFX1K80H
Rev. 0, 08/2017
NXP Semiconductors
Technical Data
1.8–400 MHz, 1800 W CW, 65 V
WIDEBAND
RF POWER LDMOS TRANSISTOR
MRFX1K80H
NI--1230H--4S
(Top View)
Drain A
31
Figure 1. Pin Connections
42
Drain B
Gate A
Gate B
Note: The backside of the package is the
source terminal for the transistor.
© 2017 NXP B.V.
