herunterladen
![](https://oss-datasheet.aipcba.com/html/DE89D3C03D1312B1E92588147289D0B4/bg1.png)
© Semiconductor Components Industries, LLC,1996
October, 2016 − Rev. 5
1 Publication Order Number:
MMBD452LT1/D
MMBD452LT1G
Dual Hot-Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high−efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements.
Features
• Extremely Low Minority Carrier Lifetime
• Very Low Capacitance
• Low Reverse Leakage
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
J
= 125°C unless otherwise noted)
Rating Symbol Value Unit
Reverse Voltage V
R
30 V
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
P
F
225
1.8
mW
mW/°C
Operating Junction Temperature Range T
J
−55 to +125 °C
Storage Temperature Range T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
(EACH DIODE)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(I
R
= 10 mA)
V
(BR)R
30 − − V
Total Capacitance
(V
R
= 15 V, f = 1.0 MHz) Figure 1
C
T
− 0.9 1.5 pF
Reverse Leakage
(V
R
= 25 V) Figure 3
I
R
− 13 200 nAdc
Forward Voltage
(I
F
= 1.0 mAdc) Figure 4
V
F
− 0.38 0.45 Vdc
Forward Voltage
(I
F
= 10 mAdc) Figure 4
V
F
− 0.52 0.6 Vdc
www.onsemi.com
SOT−23 (TO−236)
CASE 318
STYLE 11
1
2
3
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBD452LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
1
5N M G
G
5N = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
3
CATHODE/ANODE
1
ANODE
2
CATHODE
30 VOLTS
DUAL HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
Verzeichnis