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MMBD301LT3 Anwendungshinweis - ON Semiconductor

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MMBD301LT3 Anwendungshinweis

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© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 8
1 Publication Order Number:
MBD301/D
MBD301G,
MMBD301LT1G,
MMBD301LT3G,
SMMBD301LT3G
Silicon Hot-Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high−efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
Features
Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
Very Low Capacitance − 1.5 pF (Max) @ V
R
= 15 V
Low Reverse Leakage − I
R
= 13 nAdc (Typ) MBD301, MMBD301
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbo
l
Value Unit
Reverse Voltage V
R
30 V
Forward Current (DC) I
F
200 (Max) mA
Total Device Dissipation
@ T
A
= 25°C
MBD301G
MMBD301LT1G, MMBD301LT3G,
SMMBD301LT3G
Derate above 25°C
MBD301G
MMBD301LT1G, MMBD301LT3G,
SMMBD301LT3G
P
F
280
200
2.8
2.0
MW
mW/°C
Operating Junction
Temperature Range
T
J
55 to
+125
°C
Storage Temperature Range T
stg
55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
30 VOLTS
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
SOT−23 (TO−236)
CASE 318
STYLE 8
3
CATHODE
1
ANODE
2
CATHODE
1
ANODE
TO−92 2−Lead
CASE 182
STYLE 1
SOT−23TO−92
MARKING DIAGRAMS
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
1
4T M G
G
A = Assembly Location
Y = Year
W = Work Week
4T = Device Code (SOT−23)
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
MBD
301
AYW G
G
SOT−23TO−92
www.onsemi.com
Verzeichnis

MMBD301LT3 Datenblatt-PDF

MMBD301LT3 Datenblatt PDF
ON Semiconductor
5 Seiten, 106 KB
MMBD301LT3 Anderes Datenblatt
ON Semiconductor
31 Seiten, 92 KB
MMBD301LT3 Anwendungshinweis
ON Semiconductor
6 Seiten, 86 KB

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