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© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 9
1 Publication Order Number:
MJE13007/D
MJE13007
Switch-mode NPN Bipolar
Power Transistor
For Switching Power Supply Applications
The MJE13007 is designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. It is particularly
suited for 115 and 220 V switch−mode applications such as Switching
Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and
Deflection circuits.
Features
• SOA and Switching Applications Information
• Standard TO−220
• These Devices are Pb−Free and are RoHS Compliant*
• Complementary to the MJE5850 through MJE5852 Series
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Sustaining Voltage V
CEO
400 Vdc
Collector−Base Breakdown Voltage V
CES
700 Vdc
Emitter−Base Voltage V
EBO
9.0 Vdc
Collector Current − Continuous I
C
8.0 Adc
Collector Current − Peak (Note 1) I
CM
16 Adc
Base Current − Continuous I
B
4.0 Adc
Base Current − Peak (Note 1) I
BM
8.0 Adc
Emitter Current − Continuous I
E
12 Adc
Emitter Current − Peak (Note 1) I
EM
24 Adc
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
P
D
80
0.64
W
W/_C
Operating and Storage Temperature T
J
, T
stg
−65 to 150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
1.56
_C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
T
L
260
_C
*Measurement made with thermocouple contacting the bottom insulated mounting
surface of the package (in a location beneath the die), the device mounted on a
heatsink with thermal grease applied at a mounting torque of 6 to 8lbs.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
POWER TRANSISTOR
8.0 AMPERES
400 VOLTS − 80 WATTS
TO−220AB
CASE 221A−09
STYLE 1
1
www.onsemi.com
MARKING DIAGRAM
2
3
MJE13007G
AY WW
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
Device Package Shipping
ORDERING INFORMATION
MJE13007G TO−220
(Pb−Free)
50 Units / Rail
4
1
BASE
3
EMITTER
COLLECTOR
2,4
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