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MBR4060PT Anwendungshinweis - Taiwan Semiconductor

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MBR4060PT Anwendungshinweis

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OBSOLETE PART DISCONTINUED
MBR4030PT - MBR4060PT
Document number: DS23019 Rev. 9 - 4
1 of 3
www.diodes.com
July 2015
ã Diodes Incorporated
MBR4030PT - MBR4060PT
40A SCHOTTKY BARRIER RECTIFIER
Features
A
B
E
G
J
L
M
N
P
Q
K
S
M
H
R
D
C
Maximum Ratings and Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
·
Schottky Barrier Chip
·
Guard Ring Die Construction for Transient Protection
·
Low Power Loss, High Efficiency
·
High Surge Capability
·
High Current Capability and Low Forward Voltage Drop
·
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
·
Lead Free Finish, RoHS Compliant (Note 3)
Mechanical Data
·
Case: TO-3P
·
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·
Moisture Sensitivity: Level 1 per J-STD-020C
·
Terminals: Finish - Bright Tin. Plated Leads Solderable per
MIL-STD-202, Method 208
·
Polarity: As Marked on Body
·
Ordering Information: See Last Page
·
Marking: Type Number
·
Weight: 5.6 grams (approximate)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
MBR
4030PT
MBR
4035PT
MBR
4040PT
MBR
4045PT
MBR
4050PT
MBR
4060PT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
30 35 40 45 50 60 V
RMS Reverse Voltage
V
R(RMS)
21 24.5 28 31.5 35 42 V
Average Rectified Output Current @ T
C
= 125°C
(Note 1)
I
O
40 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
400 A
Forward Voltage Drop @ I
F
= 20A, T
C
= 25°C
@ I
F
= 20A, T
C
= 125°C
V
FM
0.70
0.60
0.80
0.70
V
Peak Reverse Current @ T
C
= 25°C
at Rated DC Blocking Voltage @ T
C
= 125°C
I
RM
1.0
100
mA
Typical Total Capacitance (Note 2)
C
T
1100 pF
Typical Thermal Resistance Junction to Case (Note 1)
R
qJC
1.4 °C/W
Voltage Rate of Change (Rated V
R
)
dV/dt 10,000 V/ms
Operating and Storage Temperature Range
T
j,
T
STG
-65 to +150 °C
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
TO-3P
Dim Min Max
A
1.88 2.08
B
4.68 5.36
C
20.63 22.38
D
18.5 21.5
E
2.1 2.4
G
0.51 0.76
H
15.38 16.25
J
1.90 2.70
K
2.9Æ 3.65Æ
L
3.78 4.50
M
5.2 5.7
N
0.89 1.53
P
1.82 2.46
Q
2.92 3.23
R
11.70 12.84
S
¾ 6.10
All Dimensions in mm
OBSOLETE
PART OBSOLETE
Verzeichnis

MBR4060PT Datenblatt-PDF

MBR4060PT Datenblatt PDF
Taiwan Semiconductor
4 Seiten, 1243 KB
MBR4060PT Anderes Datenblatt
Taiwan Semiconductor
7 Seiten, 506 KB
MBR4060PT Anwendungshinweis
Taiwan Semiconductor
3 Seiten, 133 KB
MBR4060PT Produktkatalog
Taiwan Semiconductor
2 Seiten, 372 KB

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