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© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 5
1 Publication Order Number:
MBD301/D
MBD301G, MMBD301LT1G
Silicon Hot-Carrier Diodes
SCHOTTKY Barrier Diodes
These devices are designed primarily for high−efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
Features
• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
• Very Low Capacitance − 1.5 pF (Max) @ V
R
= 15 V
• Low Reverse Leakage − I
R
= 13 nAdc (Typ) MBD301, MMBD301
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
MBD301 MMBD301LT1
Rating Symbol Value Unit
Reverse Voltage V
R
30 V
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
P
F
280
2.8
200
2.0
mW
mW/°C
Operating Junction
Temperature Range
T
J
−55 to +125 °C
Storage Temperature Range T
stg
−55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAM
MBD
301
AYWWG
G
TO−92
(TO−226AC)
CASE 182
STYLE 1
4T M G
G
MBD301
SOT−23
(TO−236)
CASE 318
STYLE 8
30 VOLTS
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
1
2
3
1
2
3
CATHODE
1
ANODE
2
CATHODE
1
ANODE
1
MMBD301LT1
M = Date Code
G = Pb−Free Package
MARKING
DIAGRAM
(Note: Microdot may be in either location)
(Note: Microdot may be in either location)
Verzeichnis
