herunterladen
532
Schottky Barrier Diodes (SBD)
MA3J741D, MA3J741E (MA741WA, MA741WK)
Silicon epitaxial planar type
For switching circuits
■ Features
•
Two MA3J741s are contained in one package (S-mini type 3-pin)
•
Low forward rise voltage (V
F
) and satisfactory wave detection
efficiency (η)
•
Small temperature coefficient of forward characteristic
•
Extremely low reverse current I
R
■ Absolute Maximum Ratings T
a
= 25°C
Unit : mm
Parameter Symbol Rating Unit
Reverse voltage (DC) V
R
30 V
Peak reverse voltage V
RM
30 V
Forward current
Single I
F
30 mA
(DC)
Double
*
20
Peak forward
Single I
FM
150 mA
current
Double
*
110
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
EIAJ : SC-70
Flat S-Mini Type Package
(3-pin)
Note) * : Value per hcip
Internal Connection
Marking Symbol
•
MA3J741D : M2P
•
MA3J741E : M2R
MA3J741D MA3J741E
1
Cathode 1
Anode 1
2
Cathode 2
Anode 2
3
Anode 1,2
Cathode 1,2
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
V
R
= 30 V 1 µA
Forward voltage (DC) V
F1
I
F
= 1 mA 0.4 V
V
F2
I
F
= 30 mA 1 V
Terminal capacitance C
t
V
R
= 1 V, f = 1 MHz 1.5 pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 10 mA 1 ns
I
rr
= 1 mA, R
L
= 100 Ω
Detection efficiency η V
in
= 3 V
(peak)
, f = 30 MHz 65 %
R
L
= 3.9 kΩ, C
L
= 10 pF
■ Electrical Characteristics T
a
= 25°C
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 000 MHz
3. * : t
rr
measuring instrument
1.25 ± 0.1
1.3 ± 0.1
2.0 ± 0.2
0.9 ± 0.1
0.650.65
0.425 0.425
0.3
+ 0.1
− 0
2.1 ± 0.1
0.15
+ 0.1
− 0.05
1
2
3
1
2
3
1
3
2
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
W.F.Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
I
R
= 10 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
DE
Note) The part number in the parenthesis shows conventional part number.
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