Web Analytics
Datasheet
Teiledatenblatt > TVS Diode > ON Semiconductor > MA3075WALT1G Datenblatt-PDF > MA3075WALT1G Anwendungshinweis Seite 1/5

MA3075WALT1G Anwendungshinweis - ON Semiconductor

Aktualisierte Uhrzeit: 2024-08-08 06:49:10 (UTC+8)

MA3075WALT1G Anwendungshinweis

Seite:von 5
PDF herunterladen
Neu laden
herunterladen
© Semiconductor Components Industries, LLC, 2001
October, 2017 Rev. 4
1 Publication Order Number:
MA3075WALT1/D
MA3075WALT1G,
SZMA3075WALT1G
Zener ESD Protection Diode
SOT23 Dual Common Anode Zeners for
ESD Protection
These dual monolithic silicon zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
Features
SOT23 Package Allows Two Separate Unidirectional
Configurations
Low Leakage < 1 mA @ 5.0 V
Breakdown Voltage: 7.27.9 V @ 5 mA
Low Capacitance (80 pF typical @ 0 V, 1 MHz)
ESD Protection Meeting: 16 kV Human Body Model
ESD Protection Meeting: 30 kV Air and Contact Discharge
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
Void Free, TransferMolded, Thermosetting Plastic Case
Corrosion Resistant Finish, Easily Solderable
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation @ 100 ms (Note 1)
P
pk
15 W
Steady State Power Dissipation
Derate above 25°C (Note 2)
°P
D
° 225
1.8
°mW°
mW/°C
Thermal Resistance, JunctiontoAmbient
R
q
JA
556 °C/W
Maximum Junction Temperature
R
q
JA
417 °C/W
Operating Junction and Storage
Temperature Range
T
J
, T
stg
55 to +150 °C
ESD Discharge
MIL STD 883C Method 30156
IEC6100042, Air Discharge
IEC6100042, Contact Discharge
V
PP
16
30
30
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Nonrepetitive 100 ms pulse width
2. Mounted on FR5 Board = 1.0 X 0.75 X 0.062 in.
www.onsemi.com
SOT23
CASE 318
STYLE 12
1
3
2
1
PIN 1. CATHODE
2. CATHODE
3. ANODE
Device Package Shipping
ORDERING INFORMATION
MARKING DIAGRAM
MA3075WALT1G SOT23
(PbFree)
3000 /
Tape & Reel
1
7W5 M G
G
7W5 = Specific Device Code
M = Date Code*
G = PbFree Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SZMA3075WALT1G SOT23
(PbFree)
3000 /
Tape & Reel
Verzeichnis

MA3075WALT1G Datenblatt-PDF

MA3075WALT1G Datenblatt PDF
ON Semiconductor
4 Seiten, 55 KB
MA3075WALT1G Anderes Datenblatt
ON Semiconductor
36 Seiten, 164 KB
MA3075WALT1G Diagramme zeichnen
ON Semiconductor
2 Seiten, 33 KB
MA3075WALT1G Anwendungshinweis
ON Semiconductor
5 Seiten, 125 KB
MA3075WALT1G Notizdatei
ON Semiconductor
14 Seiten, 654 KB

MA3075WALT1 Datenblatt-PDF

MA3075WALT1
Datenblatt PDF
ON Semiconductor
ESD Suppressor TVS 30kV 3Pin SOT-23 T/R
MA3075WALT1G
Datenblatt PDF
ON Semiconductor
ON SEMICONDUCTOR MA3075WALT1G Zener Array Diode, 7.5V, Dual Common Anode, 225mW, -55℃, 150℃, SOT-23
Datenblatt-PDF-Suche
Suche
100 Millionen Datenblatt-PDF, aktualisieren Sie mehr als 5.000 PDF-Dateien pro Tag.
Kontakt online
Bonnie - AiPCBA Sales Manager Online, vor 5 Minuten
Ihre E-Mail *
Nachricht *
Senden