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Switching Diodes
93
MA2J111 (MA111)
Silicon epitaxial planar type
For switching circuits
■ Features
•
Small S-mini type package, allowing high-density mounting
•
Short reverse recovery time t
rr
•
Small terminal capacitance, C
t
•
High breakdown voltage (V
R
= 80 V)
■ Absolute Maximum Ratings T
a
= 25°C
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Unit : mm
Parameter Symbol Rating Unit
Reverse voltage (DC) V
R
80 V
Peak reverse voltage V
RM
80 V
Average forward current I
F(AV)
100 mA
Peak forward current I
FM
225 mA
Non-repetitive peak forward I
FSM
500 mA
surge current
*
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
V
R
= 75 V 100 nA
Forward voltage (DC) V
F
I
F
= 100 mA 0.95 1.2 V
Reverse voltage (DC) V
R
I
R
= 100 µA80V
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 0.6 1.2 pF
Reverse recovery time
*
t
rr
I
F
= 10 mA, V
R
= 6 V 3 ns
I
rr
= 0.1 · I
R
,
R
L
= 100 Ω
■ Electrical Characteristics T
a
= 25°C
Note) 1. Rated input/output frequency: 100 MHz
2. * : t
rr
measuring circuit
Marking Symbol: 1B
1
2
KA
0.625
0.3
1.25
±
0.1
0.5
±
0.1
0.7
±
0.1
2.5 ± 0.2
1.7 ± 0.1
0.4 ± 0.1
0.4 ± 0.1
0.16
+ 0.1
− 0.06
Note) *
:t = 1 s
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
W.F.Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 0.1 · I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) The part number in the parenthesis shows conventional part number.
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