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1/44May 2003
M29W320DT
M29W320DB
32 Mbit (4Mb x8 or 2Mb x16, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
■ SUPPLY VOLTAGE
–V
CC
=
2.7V to 3.6V for Program, Erase and
Read
–V
PP
=12V for Fast Program (optional)
■ ACCESS TIME: 70, 90ns
■ PROGRAMMING TIME
– 10µs per Byte/Word typical
■ 67 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 64 Main Blocks
■ PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithms
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■ V
PP
/WP PIN for FAST PROGRAM and WRITE
PROTECT
■ TEMPORARY BLOCK UNPROTECTION
MODE
■ COMMON FLASH INTERFACE
– 64 bit Security Code
■ LOW POWER CONSUMPTION
– Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W320DT: 22CAh
– Bottom Device Code M29W320DB: 22CBh
Figure 1. Packages
TSOP48 (N)
12 x 20mm
TFBGA63 (ZA)
63 ball array
FBGA
Verzeichnis
