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Semiconductor Components Industries, LLC, 2002
May, 2002 – Rev. 6
1 Publication Order Number:
M1MA151AT1/D
M1MA151AT1,
M1MA152AT1
Preferred Device
Single Silicon Switching
Diodes
These Silicon Epitaxial Planar Diodes are designed for use in ultra
high speed switching applications. These devices are housed in the
SC–59 package which is designed for low power surface mount
applications.
• Fast t
rr
, < 3.0 ns
• Low C
D
, < 2.0 pF
• Available in 8 mm Tape and Reel
Use M1MA151/2AT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2AT3 to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (T
A
= 25°C)
Rating
Symbol Value Unit
Reverse Voltage
M1MA151AT1
V
R
40
Vdc
M1MA152AT1 80
Peak Reverse Voltage
M1MA151AT1
V
RM
40
Vdc
M1MA152AT1 80
Forward Current I
F
100 mAdc
Peak Forward Current I
FM
225 mAdc
Peak Forward Surge Current I
FSM
(Note 1)
500 mAdc
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation P
D
200 mW
Junction Temperature T
J
150 °C
Storage Temperature T
stg
–55 to +150 °C
1. t = 1 SEC
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
SC–59
SUFFIX
CASE 318D
SC–59 PACKAGE SINGLE SILICON
SWITCHING DIODES 40/80 V–100 mA
SURFACE MOUNT
MARKING DIAGRAM
2
1
3
ANODE
3
2
CATHODE
1
NO CONNECTION
Mx M
x = A for 151
B for 152
M = Date Code
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