herunterladen
IRFR/U5410
HEXFET
®
Power MOSFET
V
DSS
= -100V
R
DS(on)
= 0.205W
I
D
= -13A
5/3/99
Parameter Typ. Max. Units
R
qJC
Junction-to-Case 1.9
R
qJA
Junction-to-Ambient (PCB mount)** 50 °C/W
R
qJA
Junction-to-Ambient 110
Thermal Resistance
D-Pak
TO-252AA
I-Pak
TO-251AA
l Ultra Low On-Resistance
l P-Channel
l Surface Mount (IRFR5410)
l Straight Lead (IRFU5410)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
Description
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ -10V -13
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ -10V -8.2 A
I
DM
Pulsed Drain Current -52
P
D
@T
C
= 25°C Power Dissipation 66 W
Linear Derating Factor 0.53 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 194 mJ
I
AR
Avalanche Current -8.4 A
E
AR
Repetitive Avalanche Energy 6.3 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
S
D
G
PD - 9.1533A
www.irf.com 1
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