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IRFR/U120N
HEXFET
®
Power MOSFET
S
D
G
V
DSS
= 100V
R
DS(on)
= 0.21Ω
I
D
= 9.4A
Description
5/11/98
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 9.4
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 6.6 A
I
DM
Pulsed Drain Current 38
P
D
@T
C
= 25°C Power Dissipation 48 W
Linear Derating Factor 0.32 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 91 mJ
I
AR
Avalanche Current 5.7 A
E
AR
Repetitive Avalanche Energy 4.8 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 3.1
R
θJA
Junction-to-Ambient (PCB mount) ** ––– 50 °C/W
R
θJA
Junction-to-Ambient ––– 110
Thermal Resistance
D-PAK
TO-252AA
I-PAK
TO-251AA
l Surface Mount (IRFR120N)
l Straight Lead (IRFU120N)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
PD - 91365B
www.irf.com 1
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