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Data Sheet BTS650P
Infineon Technologies AG Page 1of 16 2003-Oct-01
Smart Highside High Current Power Switch Reversave
Features
•
Overload protection
•
Current limitation
•
Short circuit protection
•
Over temperature protection
•
Over voltage protection (including load dump)
•
Clamp of negative voltage at output
•
Fast deenergizing of inductive loads
1
)
•
Low ohmic inverse current operation
•
Reversave (Reverse battery protection)
•
Diagnostic feedback with load current sense
•
Open load detection via current sense
•
Loss of V
bb
protection
2
)
•
Electrostatic discharge (ESD) protection
Application
•
Power switch with current sense diagnostic
feedback for 12
V and 24 V DC grounded loads
•
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and
inductive loads
•
Replaces electromechanical relays, fuses and
discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS
chip on chip technology. Providing embedded protective functions.
IN
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
3
Overvoltage
protection
+ V
bb
PROFET
OUT
4 & Tab
1,2,6,7
Load GND
Load
Output
Voltage
detection
R
IS
IS
5
I
IS
I
L
V
IS
I
IN
Logic GND
Voltage
sensor
Voltage
source
Current
Sense
Logic
ESD
Temperature
sensor
R
bb
V
IN
1
) With additional external diode.
2
)
Additional external diode required for energized inductive loads (see page 9).
Product Summary
Overvoltage protection V
bb(AZ)
62 V
Output clamp
V
ON(CL)
42
V
Operating voltage
V
bb(on)
5.0 ... 34 V
On-state resistance R
ON
6.0
mΩ
Load current (ISO) I
L(ISO)
70 A
Short circuit current limitation I
L(SC)
130 A
Current sense ratio I
L
:
I
IS
14 000
TO-220-7
1
7
Standard
1
7
SMD
