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© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 15
1 Publication Order Number:
BD243B/D
BD243B, BD243C (NPN),
BD244B, BD244C (PNP)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general purpose amplifier and
switching applications.
Features
• High Current Gain Bandwidth Product
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
BD243B, BD244B
BD243C, BD244C
V
CEO
80
100
Vdc
Collector−Base Voltage
BD243B, BD244B
BD243C, BD244C
V
CB
80
100
Vdc
Emitter−Base Voltage V
EB
5.0 Vdc
Collector Current − Continuous I
C
6 Adc
Collector Current − Peak I
CM
10 Adc
Base Current I
B
2.0 Adc
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
65
0.52
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
1.92 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
80−100 VOLTS
65 WATTS
www.onsemi.com
MARKING DIAGRAM
BD24xy = Device Code
x = 3 or 4
y = B or C
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
BD24xyG
AY WW
TO−220
CASE 221A
STYLE 1
1
2
3
4
1
BASE
EMITTER 3
COLLECTOR 2, 4
1
BASE
EMITTER 3
COLLECTOR 2, 4
PNP NPN
Device Package Shipping
ORDERING INFORMATION
BD243BG TO−220
(Pb−Free)
50 Units / Rail
BD243CG TO−220
(Pb−Free)
50 Units / Rail
BD244BG TO−220
(Pb−Free)
50 Units / Rail
BD244CG TO−220
(Pb−Free)
50 Units / Rail
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