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AN10405
Increased circuit efficiency, less required board space and
saved money by replacing power transistors by low VCEsat
(BISS) transistors
Rev. 01.00 — 06 January 2006 Application note
Document information
Info Content
Keywords Bipolar transistors, BISS, low V
CEsat
, PBSS, power transistors
Abstract This application note provides information on how to make use of a cost
saving opportunity by replacing older medium power and power
transistors by Philips’ low V
CEsat
(BISS) transistors. A cross reference
table provides a cross reference for leaded and SMD types. Further
spreadsheets show a comparison of the most common parameters
(V
CEO
, I
C
, V
CEsat
and h
FE
).
