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MMG3006NT1
1
RF Device Data
Freescale Semiconductor
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3006NT1 is a General Purpose Amplifier that is internally in-
put prematched and designed for a broad range of Class A, small-signal,
high linearity, general purpose applications. It is suitable for applications
with frequencies from 400 to 2400 MHz such as Cellular, PCS, WLL, PHS,
VHF, UHF, UMTS and general small -signal RF.
Features
• Frequency: 400-2400 MHz
• P1dB: 33 dBm @ 900 MHz
• Small-Signal Gain: 17.5 dB @ 900 MHz
• Third Order Output Intercept Point: 49 dBm @ 900 MHz
• Single 5 Volt Supply
• Internally Input Prematched to 50 Ohms
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 13 inch Reel.
400-2400 MHz, 17.5 dB
33 dBm
InGaP HBT
MMG3006NT1
CASE 1898-01
QFN 4x4
PLASTIC
Table 1. Typical Performance
(1)
Characteristic Symbol 900
MHz
1960
MHz
2140
MHz
Unit
Small -Signal Gain
(S21)
G
p
17.5 14 14 dB
Input Return Loss
(S11)
IRL -8 -9 -12 dB
Output Return Loss
(S22)
ORL -13 -14 -18 dB
Power Output @1dB
Compression
P1db 33 33 33 dBm
Third Order Output
Intercept Point
IP3 49 49 49 dBm
1. V
DC
= 5 Vdc, T
C
= 25°C, 50 ohm system
Table 2. Maximum Ratings
Rating Symbol Value Unit
Supply Voltage V
DC
6 V
Supply Current I
DC
1400 mA
RF Input Power P
in
28 dBm
Storage Temperature Range T
stg
-65 to +150 °C
Junction Temperature
(2)
T
J
150 °C
2. For reliable operation, the junction temperature should not
exceed 150°C.
Table 3. Thermal Characteristics (V
DC
= 5 Vdc, I
DC
= 850 mA, T
C
= 25°C)
Characteristic Symbol Value
(3)
Unit
Thermal Resistance, Junction to Case R
θ
JC
7.8 °C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MMG3006NT1
Rev. 2, 3/2008
Freescale Semiconductor
Technical Data
Freescale Semiconductor, Inc., 2008. All rights reserved.
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