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2SK3475 Anwendungshinweis - Toshiba

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2SK3475 Anwendungshinweis

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2SK3475
2001-01-17 1/3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2 S K 3 4 7 5
VHF- and UHF-band Amplifier Applications
Output power: P
O
= 630 mW (min)
Gain: G
P
= 14.9dB (min)
Drain efficiency:
η
D
= 45% (min)
Maximum Ratings
(Ta =
==
= 25°C)
*: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)
Marking
Caution
Please take care to avoid generating static electricity when handling this transistor.
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
20 V
Gain-source voltage V
GSS
±5 V
Drain current I
D
1 A
Power dissipation P
D
* 3 W
Channel temperature T
ch
150 °C
Storage temperature range T
stg
45~150 °C
Type name
1
W B
2 3
1. Gate
2. Source
3. Drain
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of th
e
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury o
r
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in th
e
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction o
r
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energ
y
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this documen
t
shall be made at the customer’s own risk.
000707EAA2
Verzeichnis

2SK3475 Datenblatt-PDF

2SK3475 Datenblatt PDF
Toshiba
4 Seiten, 110 KB
2SK3475 Anwendungshinweis
Toshiba
3 Seiten, 149 KB
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