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2SK2596
Silicon N-Channel MOS FET
UHF Power Amplifier
ADE-208-1367 (Z)
1st. Edition
Mar. 2001
Features
• High power output, High gain, High efficiency
PG = 12.2dB, Pout = 30.2dBm, ηD = 45 %min. (f = 836.5MHz)
• Compact package capable of surface mounting
Outline
1
2
3
4
UPAK
1. Gate
2. Source
3. Drain
4. Source
D
G
S
This Device is sensitive to Elector Static Discharge.
An Adequate handling procedure is requested.
