herunterladen
2SK2399
2002-07-22
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
2
−π−MOSV)
2SK2399
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
4 V gate drive
Low drain−source ON resistance : R
DS (ON)
= 0.17 Ω (typ.)
High forward transfer admittance : |Y
fs
| = 4.5 S (typ.)
Low leakage current : I
DSS
= 100 µA (max) (V
DS
= 100 V)
Enhancement−mode : V
th
= 0.8~2.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta = 25°C)
Characteristics Symbol Rating Unit
Drain−source voltage V
DSS
100 V
Drain−gate voltage (R
GS
= 20 kΩ) V
DGR
100 V
Gate−source voltage V
GSS
±20 V
DC (Note 1) I
D
5 A
Drain current
Pulse (Note 1) I
DP
20 A
Drain power dissipation (Tc = 25°C) P
D
20 W
Single pulse avalanche energy
(Note 2)
E
AS
180 mJ
Avalanche current I
AR
5 A
Repetitive avalanche energy (Note 3) E
AR
2 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55~150 °C
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch−c)
6.25 °C / W
Thermal resistance, channel to
ambient
R
th (ch−a)
125 °C / W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: V
DD
= 25 V, T
ch
= 25°C (initial), L = 11.6 mH, R
G
= 25 Ω, I
AR
= 5 A
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC ―
JEITA SC-64
TOSHIBA 2-7B1B
Weight: 0.36 g (typ.)
JEDEC ―
JEITA ―
TOSHIBA 2-7J1B
Weight: 0.36 g (typ.)
