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2SC5200
2011-02-02
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5200
Power Amplifier Applications
• High breakdown voltage: V
CEO
= 230 V (min)
• Complementary to 2SA1943
• Suitable for use in 100-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings
(T
a
= 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
230 V
Collector-emitter voltage V
CEO
230 V
Emitter-base voltage V
EBO
5 V
Collector current I
C
15 A
Base current I
B
1.5 A
Collector power dissipation
(T
c
= 25°C)
P
C
150 W
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-21F1A
Weight: 9.75 g (typ.)
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