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2N6609 Anwendungshinweis - ON Semiconductor

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2N6609 Anwendungshinweis

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© Semiconductor Components Industries, LLC, 2013
April, 2013 Rev. 11
1 Publication Order Number:
2N3773/D
2N3773
NPN Power Transistors
The 2N3773 is a PowerBaset power transistor designed for high
power audio, disk head positioners and other linear applications. This
device can also be used in power switching circuits such as relay or
solenoid drivers, DCDC converters or inverters.
Features
High Safe Operating Area (100% Tested) 150 W @ 100 V
Completely Characterized for Linear Operation
High DC Current Gain and Low Saturation Voltage
h
FE
= 15 (Min) @ 8.0 A, 4.0 V
V
CE(sat)
= 1.4 V (Max) @ I
C
= 8.0 A, I
B
= 0.8 A
For Low Distortion Complementary Designs
This is a PbFree Device
MAXIMUM RATINGS (Note 1)
Rating
Symbol Value Unit
Collector Emitter Voltage V
CEO
140 Vdc
Collector Emitter Voltage V
CEX
160 Vdc
Collector Base Voltage V
CBO
160 Vdc
Emitter Base Voltage V
EBO
7 Vdc
Collector Current
Continuous
Peak (Note 2)
I
C
16
30
Adc
Base Current
Continuous
Peak (Note 2)
I
B
4
15
Adc
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
150
0.855
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to +200 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
JunctiontoCase
R
q
JC
1.17 °C/W
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO204
CASE 107
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
MARKING
DIAGRAM
16 A NPN
POWER TRANSISTORS
140 V, 150 W
2N3773G
MEX
AYYWW
A = Assembly Location
YY = Year
WW = Work Week
G = PbFree Package
Verzeichnis

2N6609 Datenblatt-PDF

2N6609 Datenblatt PDF
ON Semiconductor
2 Seiten, 167 KB
2N6609 Anderes Datenblatt
ON Semiconductor
22 Seiten, 73 KB
2N6609 Anwendungshinweis
ON Semiconductor
5 Seiten, 120 KB
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