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1SS370
2001-06-07
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS370
High Voltage, High Speed Switching Applications
Low forward voltage : V
F (2)
= 0.9V (typ.)
Fast reverse recovery time : t
rr
= 60ns (typ.)
Small total capacitance : C
T
= 1.5pF (typ.)
Small package : SC-70
Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage V
RM
250 V
Reverse voltage V
R
200 V
Maximum (peak) forward current I
FM
300 mA
Average forward current I
O
100 mA
Surge current (10ms) I
FSM
2 A
Power dissipation P 100 mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55∼125 °C
Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol
Test
Circuit
Test Condition Min Typ. Max Unit
V
F
(1)
― I
F
= 10mA ― 0.72 1.0
Forward voltage
V
F
(2)
― I
F
= 100mA ― 0.90 1.2
V
I
R
(1)
― V
R
= 50V ― ― 0.1
Reverse current
I
R
(2)
― V
R
= 200V ― ― 1.0
µ
A
Total capacitance C
T
― V
R
= 0, f = 1MH
z
― 1.5 3.0 pF
Reverse recovery time t
rr
― I
F
= 10mA, Fig.1 ― 10 60 ns
JEDEC ―
EIAJ SC−70
TOSHIBA
1-2P1D
Weight: 0.006g
Unit: mm
Verzeichnis
